Netac Basic SO DDR4-2666 8G C19 Memory
Is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC,memory module, based on eight 1G x 8-bit FBGA components per module.The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 260-pin DIMM uses gold contact fingers.
SPECIFICATIONS
- CL(IDD) 19 cycles
- Row Cycle Time (tRCmin) 45ns(min.)
- Refresh to Active/Refresh 350ns(min.)
- Command Time (tRFCmin)
- Row Active Time (tRASmin) 26.25ns(min.)
- Maximum Operating Power TBD W*
- UL Rating 94V-0
- Operating Temperature 0 o C to +70o C
- Storage Temperature -40o C to +85o C
*Power will vary depending on the SDRAM used.
FEATURES
- Power Supply: VDD=1.2V Typical
- VDDQ = 1.2V Typical
- VPP - 2.5V Typical
- VDDSPD=2.2V to 3.6V
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Single-rank
- On-board I2 serial presence-detect (SPD) EEPROM
- 16 internal banks; 4 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- Terminated control command and address bus
- PCB: Height 1.18” (30.00mm)
- RoHS Compliant and Halogen-Free
